TPN2R805PL,L1Q - X35 PB-F POWER MOSFET TRANSISTOR

Manufacturer Part Number

TPN2R805PL,L1Q

Internal Part Number

AX-TPN2R805PL,L1Q

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1159735 Pieces

Reference Price

~~USD 0.24192~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have TPN2R805PL,L1Q in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TPN2R805PL,L1Q. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TPN2R805PL,L1Q

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TPN2R805PL,L1Q

Manufacturer : Toshiba Semiconductor and Storage

Description : X35 PB-F POWER MOSFET TRANSISTOR

Series : U-MOSIX-H

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 45V

Current - Continuous Drain (Id) @ 25°C : 139A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 40A, 10V

Vgs(th) (Max) @ Id : 2.4V @ 300µA

Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3.2nF @ 22.5V

FET Feature : -

Power Dissipation (Max) : 2.67W (Ta), 104W (Tc)

Operating Temperature : 175°C

Mounting Type : Surface Mount

Supplier Device Package : 8-TSON Advance (3.3x3.3)

Package / Case : 8-PowerVDFN

Weight : -

Condition : New and original

Documents for TPN2R805PL,L1Q

Datasheets : TPN2R805PL,L1Q.pdf

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