TPN2R805PL,L1Q Datasheet
Specifications for TPN2R805PL,L1Q
Part Number : TPN2R805PL,L1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : X35 PB-F POWER MOSFET TRANSISTOR
Series : U-MOSIX-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 45V
Current - Continuous Drain (Id) @ 25°C : 139A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3.2nF @ 22.5V
FET Feature : -
Power Dissipation (Max) : 2.67W (Ta), 104W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
1159735 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have TPN2R805PL,L1Q in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TPN2R805PL,L1Q. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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