DMN1032UCB4-7 - MOSFET N-CH 12V 4.8A U-WLB1010-4

Manufacturer Part Number

DMN1032UCB4-7

Internal Part Number

AX-DMN1032UCB4-7

Manufacturer

Diodes Incorporated

Brief Description

MOSFET N-CH 12V 4.8A U-WLB1010-4

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1859565 Pieces

Reference Price

~~USD 0.150876~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have DMN1032UCB4-7 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for DMN1032UCB4-7. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for DMN1032UCB4-7

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : DMN1032UCB4-7

Manufacturer : Diodes Incorporated

Description : MOSFET N-CH 12V 4.8A U-WLB1010-4

Series : -

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 12V

Current - Continuous Drain (Id) @ 25°C : 4.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 26 mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id : 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 4.5nC @ 4.5V

Vgs (Max) : ±8V

Input Capacitance (Ciss) (Max) @ Vds : 450pF @ 6V

FET Feature : -

Power Dissipation (Max) : 900mW (Ta)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : U-WLB1010-4

Package / Case : 4-UFBGA, WLBGA

Weight : -

Condition : New and original

Documents for DMN1032UCB4-7

Datasheets : DMN1032UCB4-7.pdf

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