DMN1032UCB4-7 Datasheet
Specifications for DMN1032UCB4-7
Part Number : DMN1032UCB4-7
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 12V 4.8A U-WLB1010-4
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 26 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id : 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 4.5nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 450pF @ 6V
FET Feature : -
Power Dissipation (Max) : 900mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : U-WLB1010-4
Package / Case : 4-UFBGA, WLBGA
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 12V 4.8A U-WLB1010-4
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
1859565 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have DMN1032UCB4-7 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for DMN1032UCB4-7. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
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