TPC8018-H(TE12LQM) - MOSFET N-CH 30V 18A SOP8 2-6J1B

Manufacturer Part Number

TPC8018-H(TE12LQM)

Internal Part Number

AX-TPC8018-H(TE12LQM)

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET N-CH 30V 18A SOP8 2-6J1B

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

6856 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have TPC8018-H(TE12LQM) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TPC8018-H(TE12LQM). Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TPC8018-H(TE12LQM)

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TPC8018-H(TE12LQM)

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET N-CH 30V 18A SOP8 2-6J1B

Series : -

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 30V

Current - Continuous Drain (Id) @ 25°C : 18A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 9A, 10V

Vgs(th) (Max) @ Id : 2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2265pF @ 10V

FET Feature : -

Power Dissipation (Max) : 1W (Ta)

Operating Temperature : 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : 8-SOP (5.5x6.0)

Package / Case : 8-SOIC (0.173", 4.40mm Width)

Weight : -

Condition : New and original

Documents for TPC8018-H(TE12LQM)

Datasheets : TPC8018-H(TE12LQM).pdf

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