SPB80N06S08ATMA1 - MOSFET N-CH 55V 80A D2PAK

Manufacturer Part Number

SPB80N06S08ATMA1

Internal Part Number

AX-SPB80N06S08ATMA1

Manufacturer

Infineon Technologies

Brief Description

MOSFET N-CH 55V 80A D2PAK

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

9175 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have SPB80N06S08ATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SPB80N06S08ATMA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for SPB80N06S08ATMA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SPB80N06S08ATMA1

Manufacturer : Infineon Technologies

Description : MOSFET N-CH 55V 80A D2PAK

Series : SIPMOS®

Part Status : Discontinued at Digi-Key

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 55V

Current - Continuous Drain (Id) @ 25°C : 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 7.7 mOhm @ 80A, 10V

Vgs(th) (Max) @ Id : 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs : 187nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 3660pF @ 25V

FET Feature : -

Power Dissipation (Max) : 300W (Tc)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : PG-TO263-3-2

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Weight : -

Condition : New and original

Documents for SPB80N06S08ATMA1

Datasheets : SPB80N06S08ATMA1.pdf

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