GP1M010A080N - MOSFET N-CH 900V 10A TO3PN
Manufacturer Part Number
Internal Part Number
AX-GP1M010A080N
Manufacturer
Brief Description
MOSFET N-CH 900V 10A TO3PN
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
20952 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have GP1M010A080N in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for GP1M010A080N. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifications for GP1M010A080N
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : GP1M010A080N
Manufacturer : Global Power Technologies Group
Description : MOSFET N-CH 900V 10A TO3PN
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.05 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 53nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2336pF @ 25V
FET Feature : -
Power Dissipation (Max) : 312W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-3PN
Package / Case : TO-3P-3, SC-65-3
Weight : -
Condition : New and original
Documents for GP1M010A080N
Datasheets : GP1M010A080N.pdf
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