UGB8JT-E3/81 - DIODE GEN PURP 600V 8A TO263AB

Manufacturer Part Number
Internal Part Number
Brief Description
DIODE GEN PURP 600V 8A TO263AB
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
489260 Pieces
Reference Price
USD 0.573438
Our Price
- (Please contact us for a better price: [email protected])

AX Semiconductor have UGB8JT-E3/81 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for UGB8JT-E3/81. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Payment Options:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Specifications for UGB8JT-E3/81

Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : UGB8JT-E3/81
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 8A TO263AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 8A
Voltage - Forward (Vf) (Max) @ If : 1.75V @ 8A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 30µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Operating Temperature - Junction : -55°C ~ 150°C
Weight : -
Condition : New and original
Related Links : UGB8 , UGB8JT

Documents for UGB8JT-E3/81

Datasheets : UGB8JT-E3/81.pdf

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