NSB8JTHE3_A/P - DIODE GEN PURP 600V 8A TO263AB

Manufacturer Part Number

NSB8JTHE3_A/P

Internal Part Number

AX-NSB8JTHE3_A/P

Manufacturer

Vishay Semiconductor Diodes Division

Brief Description

DIODE GEN PURP 600V 8A TO263AB

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

643550 Pieces

Reference Price

~~USD 0.43596~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have NSB8JTHE3_A/P in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for NSB8JTHE3_A/P. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for NSB8JTHE3_A/P

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : NSB8JTHE3_A/P

Manufacturer : Vishay Semiconductor Diodes Division

Description : DIODE GEN PURP 600V 8A TO263AB

Series : Automotive, AEC-Q101

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 600V

Current - Average Rectified (Io) : 8A

Voltage - Forward (Vf) (Max) @ If : 1.1V @ 8A

Speed : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Current - Reverse Leakage @ Vr : 10µA @ 600V

Capacitance @ Vr, F : 55pF @ 4V, 1MHz

Mounting Type : Surface Mount

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package : TO-263AB

Operating Temperature - Junction : -55°C ~ 150°C

Weight : -

Condition : New and original

Documents for NSB8JTHE3_A/P

Datasheets : NSB8JTHE3_A/P.pdf

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