TK4A60DB(STA4,Q,M) - MOSFET N-CH 600V 3.7A TO-220SIS

Manufacturer Part Number

TK4A60DB(STA4,Q,M)

Internal Part Number

AX-TK4A60DB(STA4,Q,M)

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET N-CH 600V 3.7A TO-220SIS

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

12768 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have TK4A60DB(STA4,Q,M) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TK4A60DB(STA4,Q,M). Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TK4A60DB(STA4,Q,M)

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TK4A60DB(STA4,Q,M)

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET N-CH 600V 3.7A TO-220SIS

Series : π-MOSVII

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 600V

Current - Continuous Drain (Id) @ 25°C : 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2 Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id : 4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 25V

FET Feature : -

Power Dissipation (Max) : 35W (Tc)

Operating Temperature : 150°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : TO-220SIS

Package / Case : TO-220-3 Full Pack

Weight : -

Condition : New and original

Documents for TK4A60DB(STA4,Q,M)

Datasheets : TK4A60DB(STA4,Q,M).pdf

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