IPG20N10S4L35ATMA1 - MOSFET 2N-CH 8TDSON

Manufacturer Part Number

IPG20N10S4L35ATMA1

Internal Part Number

AX-IPG20N10S4L35ATMA1

Manufacturer

Infineon Technologies

Brief Description

MOSFET 2N-CH 8TDSON

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

990140 Pieces

Reference Price

~~USD 0.283356~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have IPG20N10S4L35ATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IPG20N10S4L35ATMA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for IPG20N10S4L35ATMA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IPG20N10S4L35ATMA1

Manufacturer : Infineon Technologies

Description : MOSFET 2N-CH 8TDSON

Series : Automotive, AEC-Q101, OptiMOS™

Part Status : Active

FET Type : 2 N-Channel (Dual)

FET Feature : Logic Level Gate

Drain to Source Voltage (Vdss) : 100V

Current - Continuous Drain (Id) @ 25°C : 20A

Rds On (Max) @ Id, Vgs : 35 mOhm @ 17A, 10V

Vgs(th) (Max) @ Id : 2.1V @ 16µA

Gate Charge (Qg) (Max) @ Vgs : 17.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds : 1105pF @ 25V

Power - Max : 43W

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Surface Mount

Package / Case : 8-PowerVDFN

Supplier Device Package : PG-TDSON-8-4

Weight : -

Condition : New and original

Documents for IPG20N10S4L35ATMA1

Datasheets : IPG20N10S4L35ATMA1.pdf

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