IPG16N10S4L61AATMA1 - MOSFET 2N-CH 8TDSON
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET 2N-CH 8TDSON
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
1143145 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have IPG16N10S4L61AATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IPG16N10S4L61AATMA1. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifications for IPG16N10S4L61AATMA1
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : IPG16N10S4L61AATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 8TDSON
Series : Automotive, AEC-Q101, OptiMOS™
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 16A
Rds On (Max) @ Id, Vgs : 61 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 90µA
Gate Charge (Qg) (Max) @ Vgs : 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 845pF @ 25V
Power - Max : 29W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerVDFN
Supplier Device Package : PG-TDSON-8-10
Weight : -
Condition : New and original
Documents for IPG16N10S4L61AATMA1
Datasheets : IPG16N10S4L61AATMA1.pdf
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