IAUS165N08S5N029ATMA1 - MOSFET N-CH 80V 660A PG-HSOG-8-1

Manufacturer Part Number

IAUS165N08S5N029ATMA1

Internal Part Number

AX-IAUS165N08S5N029ATMA1

Manufacturer

Infineon Technologies

Brief Description

MOSFET N-CH 80V 660A PG-HSOG-8-1

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

213965 Pieces

Reference Price

~~USD 1.311252~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have IAUS165N08S5N029ATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IAUS165N08S5N029ATMA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for IAUS165N08S5N029ATMA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IAUS165N08S5N029ATMA1

Manufacturer : Infineon Technologies

Description : MOSFET N-CH 80V 660A PG-HSOG-8-1

Series : Automotive, AEC-Q101, OptiMOS™

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 80V

Current - Continuous Drain (Id) @ 25°C : 165A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 2.9 mOhm @ 80A, 10V

Vgs(th) (Max) @ Id : 3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 6370pF @ 40V

FET Feature : -

Power Dissipation (Max) : 167W (Tc)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : PG-HSOG-8-1

Package / Case : 8-PowerSMD, Gull Wing

Weight : -

Condition : New and original

Documents for IAUS165N08S5N029ATMA1

Datasheets : IAUS165N08S5N029ATMA1.pdf

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