SPB08P06PGATMA1 - MOSFET P-CH 60V 8.8A TO-263

Manufacturer Part Number

SPB08P06PGATMA1

Internal Part Number

AX-SPB08P06PGATMA1

Manufacturer

Infineon Technologies

Brief Description

MOSFET P-CH 60V 8.8A TO-263

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1026800 Pieces

Reference Price

~~USD 0.27324~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have SPB08P06PGATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SPB08P06PGATMA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for SPB08P06PGATMA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : SPB08P06PGATMA1

Manufacturer : Infineon Technologies

Description : MOSFET P-CH 60V 8.8A TO-263

Series : SIPMOS®

Part Status : Active

FET Type : P-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60V

Current - Continuous Drain (Id) @ 25°C : 8.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 300 mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id : 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 13nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 25V

FET Feature : -

Power Dissipation (Max) : 42W (Tc)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : D²PAK (TO-263AB)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Weight : -

Condition : New and original

Documents for SPB08P06PGATMA1

Datasheets : SPB08P06PGATMA1.pdf

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