JAN1N5809URS - DIODE GEN PURP 100V 3A BPKG
Manufacturer Part Number
Internal Part Number
AX-JAN1N5809URS
Manufacturer
Brief Description
DIODE GEN PURP 100V 3A BPKG
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
33621 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have JAN1N5809URS in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for JAN1N5809URS. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifications for JAN1N5809URS
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : JAN1N5809URS
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 100V 3A BPKG
Series : Military, MIL-PRF-19500/477
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 875mV @ 4A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 5µA @ 100V
Capacitance @ Vr, F : 60pF @ 10V, 1MHz
Mounting Type : Surface Mount
Package / Case : SQ-MELF, B
Supplier Device Package : B, SQ-MELF
Operating Temperature - Junction : -65°C ~ 175°C
Weight : -
Condition : New and original
Documents for JAN1N5809URS
Datasheets : JAN1N5809URS.pdf
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