NVMFSW6D1N08HT1G - T8 80V 1 PART PROLIFERATI

Manufacturer Part Number

NVMFSW6D1N08HT1G

Internal Part Number

AX-NVMFSW6D1N08HT1G

Manufacturer

ON Semiconductor

Brief Description

T8 80V 1 PART PROLIFERATI

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

628655 Pieces

Reference Price

~~USD 0.446292~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have NVMFSW6D1N08HT1G in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for NVMFSW6D1N08HT1G. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for NVMFSW6D1N08HT1G

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : NVMFSW6D1N08HT1G

Manufacturer : ON Semiconductor

Description : T8 80V 1 PART PROLIFERATI

Series : Automotive, AEC-Q101

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 80V

Current - Continuous Drain (Id) @ 25°C : 17A (Ta), 89A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 10V

Vgs(th) (Max) @ Id : 4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2085pF @ 40V

FET Feature : -

Power Dissipation (Max) : 3.8W (Ta), 104W (Tc)

Operating Temperature : -55°C ~ 175°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : 5-DFN (5x6) (8-SOFL)

Package / Case : 8-PowerTDFN, 5 Leads

Weight : -

Condition : New and original

Documents for NVMFSW6D1N08HT1G

Datasheets : NVMFSW6D1N08HT1G.pdf

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