SIDR610DP-T1-GE3 - MOSFET N-CHAN 200V PPAK SO-8DC
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CHAN 200V PPAK SO-8DC
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
243520 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have SIDR610DP-T1-GE3 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SIDR610DP-T1-GE3. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifications for SIDR610DP-T1-GE3
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SIDR610DP-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CHAN 200V PPAK SO-8DC
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 8.9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 7.5V, 10V
Rds On (Max) @ Id, Vgs : 31.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1380pF @ 100V
FET Feature : -
Power Dissipation (Max) : 6.25W (Ta), 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8DC
Package / Case : PowerPAK® SO-8
Weight : -
Condition : New and original
Documents for SIDR610DP-T1-GE3
Datasheets : SIDR610DP-T1-GE3.pdf
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