IDB09E60ATMA1 - DIODE GEN PURP 600V 19.3A TO263

Manufacturer Part Number

IDB09E60ATMA1

Internal Part Number

AX-IDB09E60ATMA1

Manufacturer

Infineon Technologies

Brief Description

DIODE GEN PURP 600V 19.3A TO263

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

16568 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have IDB09E60ATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IDB09E60ATMA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for IDB09E60ATMA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : IDB09E60ATMA1

Manufacturer : Infineon Technologies

Description : DIODE GEN PURP 600V 19.3A TO263

Series : -

Part Status : Obsolete

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 600V

Current - Average Rectified (Io) : 19.3A (DC)

Voltage - Forward (Vf) (Max) @ If : 2V @ 9A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 75ns

Current - Reverse Leakage @ Vr : 50µA @ 600V

Capacitance @ Vr, F : -

Mounting Type : Surface Mount

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package : PG-TO263-3

Operating Temperature - Junction : -55°C ~ 175°C

Weight : -

Condition : New and original

Documents for IDB09E60ATMA1

Datasheets : IDB09E60ATMA1.pdf

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