FQB7N80TM_AM002 - MOSFET N-CH 800V 6.6A D2PAK

Manufacturer Part Number

FQB7N80TM_AM002

Internal Part Number

AX-FQB7N80TM_AM002

Manufacturer

ON Semiconductor

Brief Description

MOSFET N-CH 800V 6.6A D2PAK

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

70835 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have FQB7N80TM_AM002 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for FQB7N80TM_AM002. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for FQB7N80TM_AM002

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : FQB7N80TM_AM002

Manufacturer : ON Semiconductor

Description : MOSFET N-CH 800V 6.6A D2PAK

Series : QFET®

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 800V

Current - Continuous Drain (Id) @ 25°C : 6.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id : 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 52nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 1850pF @ 25V

FET Feature : -

Power Dissipation (Max) : 3.13W (Ta), 167W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : D²PAK (TO-263AB)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Weight : -

Condition : New and original

Documents for FQB7N80TM_AM002

Datasheets : FQB7N80TM_AM002.pdf

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