C3M0120090D - 900V 120 MOHM G3 SIC MOSFET
Manufacturer Part Number
Internal Part Number
AX-C3M0120090D
Manufacturer
Brief Description
900V 120 MOHM G3 SIC MOSFET
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
69270 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have C3M0120090D in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for C3M0120090D. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifications for C3M0120090D
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : C3M0120090D
Manufacturer : Cree/Wolfspeed
Description : 900V 120 MOHM G3 SIC MOSFET
Series : C3M™
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 15V
Rds On (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V
Vgs(th) (Max) @ Id : 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 17.3nC @ 15V
Vgs (Max) : +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 600V
FET Feature : -
Power Dissipation (Max) : 97W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247-3
Package / Case : TO-247-3
Weight : -
Condition : New and original
Documents for C3M0120090D
Datasheets : C3M0120090D.pdf
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