FQA8N80C_F109 - MOSFET N-CH 800V 8.4A TO-3P

Manufacturer Part Number

FQA8N80C_F109

Internal Part Number

AX-FQA8N80C_F109

Manufacturer

ON Semiconductor

Brief Description

MOSFET N-CH 800V 8.4A TO-3P

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

6440 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have FQA8N80C_F109 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for FQA8N80C_F109. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for FQA8N80C_F109

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : FQA8N80C_F109

Manufacturer : ON Semiconductor

Description : MOSFET N-CH 800V 8.4A TO-3P

Series : QFET®

Part Status : Obsolete

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 800V

Current - Continuous Drain (Id) @ 25°C : 8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.55 Ohm @ 4.2A, 10V

Vgs(th) (Max) @ Id : 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 2050pF @ 25V

FET Feature : -

Power Dissipation (Max) : 220W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Through Hole

Supplier Device Package : TO-3P

Package / Case : TO-3P-3, SC-65-3

Weight : -

Condition : New and original

Documents for FQA8N80C_F109

Datasheets : FQA8N80C_F109.pdf

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