BSC010NE2LSIATMA1 - MOSFET N-CH 25V 38A TDSON-8

Manufacturer Part Number

BSC010NE2LSIATMA1

Internal Part Number

AX-BSC010NE2LSIATMA1

Manufacturer

Infineon Technologies

Brief Description

MOSFET N-CH 25V 38A TDSON-8

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

581315 Pieces

Reference Price

~~USD 0.482628~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have BSC010NE2LSIATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for BSC010NE2LSIATMA1. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for BSC010NE2LSIATMA1

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : BSC010NE2LSIATMA1

Manufacturer : Infineon Technologies

Description : MOSFET N-CH 25V 38A TDSON-8

Series : OptiMOS™

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 25V

Current - Continuous Drain (Id) @ 25°C : 38A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.05 mOhm @ 30A, 10V

Vgs(th) (Max) @ Id : 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 59nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 4200pF @ 12V

FET Feature : -

Power Dissipation (Max) : 2.5W (Ta), 96W (Tc)

Operating Temperature : -

Mounting Type : Surface Mount

Supplier Device Package : PG-TDSON-8

Package / Case : 8-PowerTDFN

Weight : -

Condition : New and original

Documents for BSC010NE2LSIATMA1

Datasheets : BSC010NE2LSIATMA1.pdf

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