BSG0810NDIATMA1 - MOSFET 2N-CH 25V 19A/39A 8TISON
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET 2N-CH 25V 19A/39A 8TISON
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
417080 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have BSG0810NDIATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for BSG0810NDIATMA1. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifications for BSG0810NDIATMA1
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : BSG0810NDIATMA1
Manufacturer : Infineon Technologies
Description : MOSFET 2N-CH 25V 19A/39A 8TISON
Series : OptiMOS™
Part Status : Active
FET Type : 2 N-Channel (Dual) Asymmetrical
FET Feature : Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) : 25V
Current - Continuous Drain (Id) @ 25°C : 19A, 39A
Rds On (Max) @ Id, Vgs : 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 1040pF @ 12V
Power - Max : 2.5W
Operating Temperature : -55°C ~ 155°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : PG-TISON-8
Weight : -
Condition : New and original
Documents for BSG0810NDIATMA1
Datasheets : BSG0810NDIATMA1.pdf
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