GA10SICP12-263 - TRANS SJT 1200V 25A TO263-7
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
TRANS SJT 1200V 25A TO263-7
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
23443 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have GA10SICP12-263 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for GA10SICP12-263. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifications for GA10SICP12-263
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : GA10SICP12-263
Manufacturer : GeneSiC Semiconductor
Description : TRANS SJT 1200V 25A TO263-7
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 100 mOhm @ 10A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1403pF @ 800V
FET Feature : -
Power Dissipation (Max) : 170W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK (7-Lead)
Package / Case : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Weight : -
Condition : New and original
Documents for GA10SICP12-263
Datasheets : GA10SICP12-263.pdf
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