SI3900DV-T1-GE3 - MOSFET 2N-CH 20V 2A 6-TSOP
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET 2N-CH 20V 2A 6-TSOP
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
1018300 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have SI3900DV-T1-GE3 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SI3900DV-T1-GE3. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Specifications for SI3900DV-T1-GE3
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Part Number : SI3900DV-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 20V 2A 6-TSOP
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2A
Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 830mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SOT-23-6 Thin, TSOT-23-6
Supplier Device Package : 6-TSOP
Weight : -
Condition : New and original
Documents for SI3900DV-T1-GE3
Datasheets : SI3900DV-T1-GE3.pdf
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