TPN2010FNH,L1Q - MOSFET N-CH 250V 5.6A 8TSON

Manufacturer Part Number

TPN2010FNH,L1Q

Internal Part Number

AX-TPN2010FNH,L1Q

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET N-CH 250V 5.6A 8TSON

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

734075 Pieces

Reference Price

~~USD 0.3822~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have TPN2010FNH,L1Q in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TPN2010FNH,L1Q. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TPN2010FNH,L1Q

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TPN2010FNH,L1Q

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET N-CH 250V 5.6A 8TSON

Series : U-MOSVIII-H

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 250V

Current - Continuous Drain (Id) @ 25°C : 5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 198 mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id : 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 100V

FET Feature : -

Power Dissipation (Max) : 700mW (Ta), 39W (Tc)

Operating Temperature : 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : 8-TSON Advance (3.3x3.3)

Package / Case : 8-PowerVDFN

Weight : -

Condition : New and original

Documents for TPN2010FNH,L1Q

Datasheets : TPN2010FNH,L1Q.pdf

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