TPN22006NH,LQ - MOSFET N CH 60V 9A 8-TSON

Manufacturer Part Number

TPN22006NH,LQ

Internal Part Number

AX-TPN22006NH,LQ

Manufacturer

Toshiba Semiconductor and Storage

Brief Description

MOSFET N CH 60V 9A 8-TSON

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1465850 Pieces

Reference Price

~~USD 0.1914~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have TPN22006NH,LQ in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TPN22006NH,LQ. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for TPN22006NH,LQ

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : TPN22006NH,LQ

Manufacturer : Toshiba Semiconductor and Storage

Description : MOSFET N CH 60V 9A 8-TSON

Series : U-MOSVIII-H

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 60V

Current - Continuous Drain (Id) @ 25°C : 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 6.5V, 10V

Rds On (Max) @ Id, Vgs : 22 mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id : 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 710pF @ 30V

FET Feature : -

Power Dissipation (Max) : 700mW (Ta), 18W (Tc)

Operating Temperature : 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : 8-TSON Advance (3.3x3.3)

Package / Case : 8-PowerVDFN

Weight : -

Condition : New and original

Documents for TPN22006NH,LQ

Datasheets : TPN22006NH,LQ.pdf

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