FQT1N80TF-WS - MOSFET N-CH 800V 0.2A SOT-223

Manufacturer Part Number

FQT1N80TF-WS

Internal Part Number

AX-FQT1N80TF-WS

Manufacturer

ON Semiconductor

Brief Description

MOSFET N-CH 800V 0.2A SOT-223

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

1005755 Pieces

Reference Price

~~USD 0.278958~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have FQT1N80TF-WS in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for FQT1N80TF-WS. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for FQT1N80TF-WS

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : FQT1N80TF-WS

Manufacturer : ON Semiconductor

Description : MOSFET N-CH 800V 0.2A SOT-223

Series : QFET®

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 800V

Current - Continuous Drain (Id) @ 25°C : 200mA (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 20 Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id : 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 7.2nC @ 10V

Vgs (Max) : ±30V

Input Capacitance (Ciss) (Max) @ Vds : 195pF @ 25V

FET Feature : -

Power Dissipation (Max) : 2.1W (Tc)

Operating Temperature : -55°C ~ 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : SOT-223-3

Package / Case : TO-261-3

Weight : -

Condition : New and original

Documents for FQT1N80TF-WS

Datasheets : FQT1N80TF-WS.pdf

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