H7N1002LSTL-E - MOSFET N-CH 100V LDPAK

Manufacturer Part Number

H7N1002LSTL-E

Internal Part Number

AX-H7N1002LSTL-E

Manufacturer

Renesas Electronics America

Brief Description

MOSFET N-CH 100V LDPAK

RoHS Status

Lead free / RoHS Compliant

Delivery Time

1-2 days

Available Quantity

21736 Pieces

Reference Price

~~USD 0~~

Our Price

- (Please contact us for a better price: [email protected])

AX Semiconductor have H7N1002LSTL-E in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for H7N1002LSTL-E. Our email: [email protected]

Shipping options and shipping time:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Payment Options:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Specifications for H7N1002LSTL-E

Quality Guarantee : 365 days warranty

Stock Resource : Franchised Distributor / Manufacturer Direct

Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Part Number : H7N1002LSTL-E

Manufacturer : Renesas Electronics America

Description : MOSFET N-CH 100V LDPAK

Series : -

Part Status : Active

FET Type : N-Channel

Technology : MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) : 100V

Current - Continuous Drain (Id) @ 25°C : 75A (Ta)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10 mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id : -

Gate Charge (Qg) (Max) @ Vgs : 155nC @ 10V

Vgs (Max) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 9700pF @ 10V

FET Feature : -

Power Dissipation (Max) : 100W (Tc)

Operating Temperature : 150°C (TJ)

Mounting Type : Surface Mount

Supplier Device Package : 4-LDPAK

Package / Case : SC-83

Weight : -

Condition : New and original

Documents for H7N1002LSTL-E

Datasheets : H7N1002LSTL-E.pdf

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