TK31V60W5,LVQ Datasheet
Specifications for TK31V60W5,LVQ
Part Number : TK31V60W5,LVQ
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N -CH 600V 30.8A DFN
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 109 mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 105nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 300V
FET Feature : -
Power Dissipation (Max) : 240W (Tc)
Operating Temperature : 150°C (TA)
Mounting Type : Surface Mount
Supplier Device Package : 4-DFN-EP (8x8)
Package / Case : 4-VSFN Exposed Pad
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N -CH 600V 30.8A DFN
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
237720 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have TK31V60W5,LVQ in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TK31V60W5,LVQ. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
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