Specifications for TK160F10N1L,LQ

Part Number : TK160F10N1L,LQ
Manufacturer : Toshiba Semiconductor and Storage
Description : X35 PB-F POWER MOSFET TRANSISTOR
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10100pF @ 10V
FET Feature : -
Power Dissipation (Max) : 375W (Tc)
Operating Temperature : 175°C
Mounting Type : Surface Mount
Supplier Device Package : TO-220SM(W)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
348255 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

AX Semiconductor have TK160F10N1L,LQ in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for TK160F10N1L,LQ. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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