Specifications for SCTWA50N120

Part Number : SCTWA50N120
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 1200V 65A HIP247
Series : -
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 20V
Rds On (Max) @ Id, Vgs : 69 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id : 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 122nC @ 20V
Vgs (Max) : +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 400V
FET Feature : -
Power Dissipation (Max) : 318W (Tc)
Operating Temperature : -55°C ~ 200°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : HiP247™
Package / Case : TO-247-3
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 1200V 65A HIP247
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
22778 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

AX Semiconductor have SCTWA50N120 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SCTWA50N120. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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