SCTW90N65G2V Datasheet
Specifications for SCTW90N65G2V
Part Number : SCTW90N65G2V
Manufacturer : STMicroelectronics
Description : SILICON CARBIDE POWER MOSFET 650
Series : -
Part Status : Active
FET Type : N-Channel
Technology : SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 18V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A, 18V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 157nC @ 18V
Vgs (Max) : +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds : 3300pF @ 400V
FET Feature : -
Power Dissipation (Max) : 390W (Tc)
Operating Temperature : -55°C ~ 200°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : HiP247™
Package / Case : TO-247-3
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
AX-SCTW90N65G2V
Manufacturer
Brief Description
SILICON CARBIDE POWER MOSFET 650
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
12424 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have SCTW90N65G2V in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for SCTW90N65G2V. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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