Specifications for RQJ0303PGDQA#H6

Part Number : RQJ0303PGDQA#H6
Manufacturer : Renesas Electronics America
Description : MOSFET P-CH 30V 3.3A 3MPAK
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 68 mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds : 625pF @ 10V
FET Feature : -
Power Dissipation (Max) : 800mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-MPAK
Package / Case : TO-236-3, SC-59, SOT-23-3
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Brief Description
MOSFET P-CH 30V 3.3A 3MPAK
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
19864 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

AX Semiconductor have RQJ0303PGDQA#H6 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for RQJ0303PGDQA#H6. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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