RN1962FE(TE85L,F) Datasheet
Specifications for RN1962FE(TE85L,F)
Part Number : RN1962FE(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS 2NPN PREBIAS 0.1W ES6
Series : -
Part Status : Obsolete
Transistor Type : 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : ES6
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
TRANS 2NPN PREBIAS 0.1W ES6
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
31171 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have RN1962FE(TE85L,F) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for RN1962FE(TE85L,F). Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
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- Western Union
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