Specifications for RN1701JE(TE85L,F)

Part Number : RN1701JE(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS 2NPN PREBIAS 0.1W ESV
Series : -
Part Status : Active
Transistor Type : 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SOT-553
Supplier Device Package : ESV
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Brief Description
TRANS 2NPN PREBIAS 0.1W ESV
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
5301660 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

AX Semiconductor have RN1701JE(TE85L,F) in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for RN1701JE(TE85L,F). Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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