Specifications for PSMN6R3-120ESQ

Part Number : PSMN6R3-120ESQ
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 120V 70A I2PAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 120V
Current - Continuous Drain (Id) @ 25°C : 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 6.7 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 207.1nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 11384pF @ 60V
FET Feature : -
Power Dissipation (Max) : 405W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I2PAK
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 120V 70A I2PAK
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
167595 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

AX Semiconductor have PSMN6R3-120ESQ in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for PSMN6R3-120ESQ. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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