IXTA1R6N100D2 Datasheet
Specifications for IXTA1R6N100D2
Part Number : IXTA1R6N100D2
Manufacturer : IXYS
Description : MOSFET N-CH 1000V 1.6A D2PAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 10 Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : 27nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 645pF @ 25V
FET Feature : Depletion Mode
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (IXTA)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 1000V 1.6A D2PAK
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
239795 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have IXTA1R6N100D2 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IXTA1R6N100D2. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
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