IPB65R110CFDATMA1 Datasheet
Specifications for IPB65R110CFDATMA1
Part Number : IPB65R110CFDATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 31.2A TO263
Series : CoolMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 110 mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs : 118nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3240pF @ 100V
FET Feature : -
Power Dissipation (Max) : 277.8W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK (TO-263AB)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
MOSFET N-CH 650V 31.2A TO263
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
141420 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have IPB65R110CFDATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IPB65R110CFDATMA1. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
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