IGT60R070D1ATMA1 Datasheet
Specifications for IGT60R070D1ATMA1
Part Number : IGT60R070D1ATMA1
Manufacturer : Infineon Technologies
Description : IC GAN FET 600V 60A 8HSOF
Series : CoolGaN™
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -10V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 400V
FET Feature : -
Power Dissipation (Max) : 125W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-HSOF-8-3
Package / Case : 8-PowerSFN
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
IC GAN FET 600V 60A 8HSOF
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
40404 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have IGT60R070D1ATMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IGT60R070D1ATMA1. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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