Specifications for IGLD60R070D1AUMA1

Part Number : IGLD60R070D1AUMA1
Manufacturer : Infineon Technologies
Description : IC GAN FET 600V 60A 8SON
Series : CoolGaN™
Part Status : Active
FET Type : N-Channel
Technology : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : -
Vgs(th) (Max) @ Id : 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -10V
Input Capacitance (Ciss) (Max) @ Vds : 380pF @ 400V
FET Feature : -
Power Dissipation (Max) : 114W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-LSON-8-1
Package / Case : 8-LDFN Exposed Pad
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
IC GAN FET 600V 60A 8SON
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
41041 Pieces
Reference Price
USD 0
Our Price
- (Please contact us for a better price: [email protected])

AX Semiconductor have IGLD60R070D1AUMA1 in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for IGLD60R070D1AUMA1. Our email: [email protected]
Shipping options and shipping time:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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