HGT1S10N120BNS Datasheet
Specifications for HGT1S10N120BNS
Part Number : HGT1S10N120BNS
Manufacturer : ON Semiconductor
Description : IGBT 1200V 35A 298W TO263AB
Series : -
Part Status : Not For New Designs
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 35A
Current - Collector Pulsed (Icm) : 80A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 10A
Power - Max : 298W
Switching Energy : 320µJ (on), 800µJ (off)
Input Type : Standard
Gate Charge : 100nC
Td (on/off) @ 25°C : 23ns/165ns
Test Condition : 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
Manufacturer
Brief Description
IGBT 1200V 35A 298W TO263AB
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
142670 Pieces
Reference Price
Our Price
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- AX Semiconductor have HGT1S10N120BNS in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for HGT1S10N120BNS. Our email: [email protected]
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