EPC2103ENG Datasheet
Specifications for EPC2103ENG
Part Number : EPC2103ENG
Manufacturer : EPC
Description : GAN TRANS 2N-CH 80V BUMPED DIE
Series : eGaN®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) : 80V
Current - Continuous Drain (Id) @ 25°C : 23A
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id : 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 40V
Power - Max : -
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Die
Weight : -
Condition : New and original
Quality Guarantee : 365 days warranty
Stock Resource : Franchised Distributor / Manufacturer Direct
Country of Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Manufacturer Part Number
Internal Part Number
AX-EPC2103ENG
Manufacturer
Brief Description
GAN TRANS 2N-CH 80V BUMPED DIE
RoHS Status
Lead free / RoHS Compliant
Delivery Time
1-2 days
Available Quantity
28483 Pieces
Reference Price
Our Price
- (Please contact us for a better price: [email protected])
- AX Semiconductor have EPC2103ENG in stock for sell. We can ship to you within 1-2 days. Please contact us for a better price for EPC2103ENG. Our email: [email protected]
- Shipping options and shipping time:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Payment Options:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
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